Gallium Arsenide Products & Services
Using MESFET, PHEMT and HBT transistor technologies, Northrop Grumman has developed a family of GaAs MMIC products focused on power generation for radar, missile guidance and communications applications. The MESFET process uses 0.4 µm electron beam defined gates for moderate performance requirements up to 18 GHz.
Foundry ServicesComplete foundry service for Gallium Arsenide (GaAs) power amplifiers and control circuits within the 1-40 GHz range. |