Bipolar RF Transistors
WPBT32A0912A 960-1215 MHz Bipolar RF Transistor
The WPBT32A0912A application-specific transistor uses the 3217 L-Band die which was developed for pulse radar systems. Optimal internal matching delivers high performance for applications such as the MIDS and JTIDS communication systems. Low thermal resistance and high efficiency couple to provide nearly imperceptible droop across the entire TDMA burst waveform at power levels of over 200 watts. Brochure
WPTB32A1214A 1215-1400 MHz Bipolar RF Transistor
The WPTB32A1214A is a high-power NPN transistor designed for pulsed radar applications. The 3217 L-Band die utilized in this device is capable of operating over a wide range of pulse widths, duty cycles and bandwidths. An application-specific design can easily be tailored to your requirements through minor changes in ballast resistor value and internal matching network values. Brochure
WPTB48F2729C 2.7-2.9 GHz Bipolar RF Transistor
The WPTB48F2729C is an application specific transistor implemented using Northrop Grumman's SiGe Power Bipolar process and developed for pulsed radar systems. Optimal internal matching delivers high performance for Air Traffic Control applications with collector efficiencies approaching the values normally observed for L-Band devices operating at less than half the frequency. This device is configured for common base operation and is tested at 60 µsec pulse width and 6% duty cycle. Brochure