Foundry Services
Northrop Grumman provides a complete foundry service for Gallium Arsenide (GaAs) power amplifiers and control circuits within the 1-40 GHz range. The standard FET/HEMT service uses 4-inch GaAs wafers with MBE epitaxial layers and either 0.25 or 0.5µ gates generated with E-beam. This ensures quality amplifiers with state-of-the-art power and efficiency. HBT standard service is also available.Proven Quality and Reliability
Customer-designed amplifiers and circuits are processed in the same cleanroom facility used to produce Northrop Grumman's system devices. This leading edge facility provides complete on-wafer DC and RF test capability.Northrop Grumman pioneered on-wafer power measurements of MMICs. All fabricated MMICs can be completely evaluated at the wafer level to provide known good die.
Northrop Grumman's foundry process achieves maximum quality and reliability by providing:
- Device uniformity through the use of MBE GaAs material with stringently controlled doping
- MIMIC program-qualified process line
- E-beam written gates for consistent performance
- Double-recessed gates for state-of-the-art RF power performance
- SiN passivation
- Proven production history
User-Friendly, Custom Designs
First-pass success is assured for custom circuit designs using the Northrop Grumman MACRO cell approach. MACRO cells are available for FETs, HBTs, PHEMTs, and the following passive elements:- Transmission lines
- Plated air bridge interconnects for low capacitance
- T-junctions
- Rectangular spiral inductors
- MIM capacitors
- Curves
- Bends
- Tapers
- Through wafer vias for low ground-lead inductance
- NiCr thin film resistors
A foundry tutorial course can be arranged at a customer location to speed up the design cycle. The procedure for a custom design includes:
- Consultation with foundry design personnel to review design requirements
- Design and layout of circuits using MACRO elements
- Process and test of designs

